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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
MJ900
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO=-60V(Min.) *High DC Current Gain: hFE= 1000(Min.)@IC=-3A *Low Collector Saturation Voltage: VCE (sat)=-2.0V(Max.)@ IC=-3A
APPLICATIONS *Designed for use as output devices in complementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL VCBO VCEO VEBO IC IB
B
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continunous Base Current-Continunous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range
ww w
PARAMETER
scs .i
VALUE -60 -60 -5 -8 -0.1 90 200 -55~+200
UNIT V
.cn mi e
V V A A W
PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.94 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MJ900
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=-0.1A; IB= 0
-60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=-3A; IB=-12mA
-2.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC=-8A; IB=-40mA
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC=-3A, VCE=-3V VCE=-60V; RBE=1k VCE=-60V; RBE=1k; TC=150 VCE=-30V; IB= 0
-2.5 -1.0 -5.0 -0.5
V
ICER
Collector Cutoff Current
mA
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
w w
scs .i w
VEB=-5V; IC= 0
IC=-3A, VCE=-3V
.cn mi e
1000 750
mA
-2.0
mA
IC=-4A, VCE=- 3V
isc Websitewww.iscsemi.cn


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